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IPJQUMTP - 2602PJ

- Substrate: Silicon 220 nm (2 μm BOX)

- Includes 10 SEM images in total

- Includes 2.2 micron oxide cladding

- Includes custom dicing into 4 sub-dies in total

Oxide Window Openings (Dedicated)

- 100 +/- 50 nm of oxide remaining over features


Total Cost:  $3,744.00

FABrIC Contribution, managed by CMC:  $1,310.40

Researcher Contribution, with FABriC Membership & Research Subscription:  $2,433.60

$2,433.60

IPJQUWHI - 2602PJ

Substrate: Silicon 220 nm (2 μm BOX)

- Waveguide area: 0.77 mm2

- Includes 10 SEM images in total


Total Cost:  $1,861.00

FABrIC Contribution, managed by CMC:  $651.35

Researcher Contribution, with FABriC Membership & Research Subscription:  $1,209.65

$1,209.65

IPJMG198 - 2603PJ

NanoSOI Photonics Fabrication Service - MPW Submission # 2321

  • - Substrate: Silicon 220 nm (2 μm BOX)
  • - Layout Name: IPJMG198 (IPJMG198_2603PJ_v3_4LuzR4k.GDS)
  • - Includes 2.2 micron oxide cladding
  • - Includes tri-layer metallization
  • - Includes deep trenches for thermal isolation trenches

Total Cost: $3,334.00

FABrIC Support, managed by CMC: $1,166.90

Research Contribution, with research subscription:  $2,167.10


$2,167.10

IDKA6PS1 - 2601DK / GF MPW0380

GF 28nm - 4.2mm x 3.8mm

GLOBALFOUNDRIES 28nm process technology offers a HKMG platform to support logic, analog and RF.

Deliverable:  100 bare die

$193,004.28

IDJH1PB2 - 3mm x 2.5mm - GF 22FDX / CMC Run Code: 2602DJ / MPW2278

GF 22FDX/FDX+ FDSOI 22nm - MPW (min area 4mm2)

GLOBALFOUNDRIES (GF) 22FDX 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI)

process technology platform for low power embedded applications. The 22 nm FD-SOI

transistor technology delivers FinFET-like performance with energy-efficiency. The

simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables

ultra low power analog/RF/mmWave designs.

Delivery of 100 untested dies

Minimum area required 4mm2, price per mm2.

$191,670.00